K4A4G165WD-BCTD vs H5AN4G6NBJR-VKC Comparison

Detailed side-by-side comparison of K4A4G165WD-BCTD by Samsung Electronics and H5AN4G6NBJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A4G165WD-BCTD K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung

K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung

K4A4G165WD-BCTD ✓ Active
SK hynix
H5AN4G6NBJR-VKC H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix

H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix

H5AN4G6NBJR-VKC ✓ Active

Specification Comparison

Parameter K4A4G165WD-BCTD H5AN4G6NBJR-VKC
Brand Samsung Electronics SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $19.00 $12.96
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
Organization 256M x 16 —
Data Rate 2666 Mbps/pin (-BCTD speed grade) 2666 Mbps
Supply Voltage (VDD) 1.2 V 1.2 V nominal (1.14 V to 1.26 V)
Core Supply (VPP) 2.5 V —
Interface SSTL-12 Parallel
Data Mask Yes (DM per byte lane) —
Bank Architecture 16 banks / 4 bank groups —
Package 96-ball FBGA FBGA-96 / TFBGA (PBGA96)
Mounting Type Surface Mount (BGA) Surface Mount
Operating Temperature 0C to +85C (commercial) -40C to +95C
On-Die Termination Dynamic ODT —
ZQ Calibration Yes (external RZQ resistor) —
CRC / CA Parity CRC read/write support —
Reset Asynchronous reset (RESET_n) —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Memory Size — 4 Gbit
Memory Organization — 256M x 16
Clock Frequency — 1.6 GHz (internal reference per distributor data)
Operating Current — 38 mA (typical, per distributor data)
Technology — CMOS
Body Size — 13 mm, 1.2 mm profile, 0.8 mm ball pitch
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration; write leveling
Protection Functions — Asynchronous reset; CRC; data mask
Refresh — Auto self-refresh
Packaging — Tray

Datasheets & Resources

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