K4A4G165WF-BCRC vs K4A4G165WD-BCPB Comparison
Detailed side-by-side comparison of K4A4G165WF-BCRC by Samsung Electronics and K4A4G165WD-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
K4A4G165WF-BCRC ✓ Active
Specification Comparison
| Parameter | K4A4G165WF-BCRC | K4A4G165WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $17.08 | $3.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | DDR4-2400 | — |
| Supply Voltage | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Package | FBGA-96 (TFBGA) | FBGA-96 |
| Die Type | Samsung 4Gb F-die | — |
| Bank / Bank Group Architecture | 8 banks, bank groups | — |
| Data Mask | Supported (DM) | — |
| CRC / CA Parity | Supported | — |
| ZQ Calibration | Supported | — |
| Dynamic ODT | Supported | — |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (lead-free suffix) |
| Data Rate | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| CAS Latency | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Interface | — | DDR4 (synchronous, source-synchronous strobe) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |