K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
MPN: K4A4G165WF-BCRC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $20.75 | $20.75 |
| 10 | $19.7 | $197.00 |
| 100 | $18.65 | $1,865.00 |
| 500 | $17.9 | $8,950.00 |
| 1,000 | $17.08 | $17,080.00 |
Drop-in alternatives for K4A4G165WF-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A4G165WF-BCWE
✅ Drop-In✓ In Stock
$10.65 / Unit
View Datasheet →K4A4G165WF-BCTD
✅ Drop-In✓ In Stock
$2.69 / Unit
View Datasheet →K4A4G165WE-BCRC
✅ Drop-In📋 Reference alternative (not in catalog)
K4A4G165WE-BCTD
✅ Drop-In✓ In Stock
$11.38 / Unit
View Datasheet →MT40A256M16GE-075E:B
✅ Drop-In✓ In Stock
$3.95 / Unit
View Datasheet →K4A4G165WF-BCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gb |
| Organization | 256M x 16 |
| Speed Grade | DDR4-2400 |
| Supply Voltage | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V |
| Package | FBGA-96 (TFBGA) |
| Die Type | Samsung 4Gb F-die |
| Bank / Bank Group Architecture | 8 banks, bank groups |
| Data Mask | Supported (DM) |
| CRC / CA Parity | Supported |
| ZQ Calibration | Supported |
| Dynamic ODT | Supported |
| Auto Precharge | Supported |
| Asynchronous Reset | Supported |
| Operating Temperature | 0C to +95C |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
K4A4G165WF-BCRC fbga-96 (tfbga) Pin Configuration Guide
Complete pinout information for K4A4G165WF-BCRC (fbga-96 (tfbga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A4G165WF-BCRC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A4G165WF-BCRC is suitable for 6 applications: Industrial Controllers and PLCs, Embedded Computing Modules (SOM/COM), Networking and Communication Equipment, Consumer Set-Top Boxes and Smart TV Platforms, Firmware Boot and Data Logging Storage Systems, Replacement Sourcing and DDR3-to-DDR4 Migration.
Industrial Controllers and PLCs
The K4A4G165WF-BCRC fits industrial controllers where deterministic 4Gb-class working memory at low power is required: the 1.2V supply (1.14V to 1.26V) cuts DRAM power roughly 25% versus 1.5V DDR3, reducing heat inside sealed control cabinets, while the 256M x16 organization matches the 16-bit memory buses common on embedded MPUs. In a typical PLC main board, the DDR4 sits on the controller's dedicated memory interface with ZQ calibration (240 ohm 1% resistor) and dynamic ODT simplifying termination. The asynchronous reset feature allows the memory to be re-initialized independently of the power tree, improving fault recovery. Note the 0C to +95C rating; for cold or outdoor installations, specify the IT-grade -BITD variant of the same family.
Recommended
Embedded Computing Modules (SOM/COM)
System-on-module and COM Express designs use the K4A4G165WF-BCRC as main memory because its 96-ball FBGA footprint and JEDEC-standard x16 ballout allow second sourcing with zero PCB change. Four devices provide 2 GB of 32-bit or 64-bit-wide memory at DDR4-2400, delivering up to 19.2 GB/s theoretical bandwidth per 64-bit bus - sufficient for Linux/RTOS application loading and video frame buffering. The CRC and CA parity features supported by the device help detect command/address errors in electrically noisy environments. Layout must follow fly-by CK/CA topology with per-byte DQS length matching; the F-die's on-die termination reduces external component count versus DDR3, freeing board area on dense modules.
Recommended
Networking and Communication Equipment
Line cards, switches, and gateways buffer packet traffic in DDR4, and the K4A4G165WF-BCRC's DDR4-2400 speed grade with bank-group architecture enables high random-access throughput for queue management. The 16-bit organization lets designers populate narrow independent memory channels per port group, isolating traffic domains. Samsung's supported CRC/CA parity and ZQ calibration features improve reliability in 24/7-operating network equipment, and the 1.2V rail simplifies shared power-plane design with other low-voltage silicon. Effective bandwidth depends on page-hit locality; packet-buffer engines typically achieve 60-80% efficiency, so provision one device per 16-bit channel per 1-2 Gbps of sustained traffic as a conservative starting estimate.
Recommended
Consumer Set-Top Boxes and Smart TV Platforms
Set-top box and smart TV SoCs commonly expose a 16-bit DDR4 channel, and the K4A4G165WF-BCRC supplies a single-device 4Gb solution at DDR4-2400 - adequate for 4K video buffering and application memory in cost-optimized designs. The 1.2V operation and small 96-ball FBGA footprint (roughly 78 mm x 135 mm class package) suit thin consumer housings with limited airflow; total DRAM power at moderate utilization stays in the sub-watt range, so no heatsinking is required. The data mask (DM) function supports efficient partial-frame writes for graphics compositing. Because consumer build volumes are high, the drop-in compatibility with WF/WE family variants (BCWE, BCTD) provides valuable supply-chain flexibility.
Recommended
Firmware Boot and Data Logging Storage Systems
For data storage, firmware boot, and embedded logging applications, the K4A4G165WF-BCRC serves as execution memory and write buffer in front of NAND flash or eMMC. Its 4Gb capacity hosts Linux kernel plus root filesystem loaded at boot, while the DDR4-2400 bandwidth accelerates log aggregation before periodic flash commits. The asynchronous reset function lets a supervisor MCU recover the DRAM without full system power cycling - valuable in data loggers that must preserve configuration state. ZQ calibration maintains signal integrity across temperature drift in unconditioned logging environments (0C to +95C rating). Designers should size buffering RAM as 2-4x the largest expected single write burst between flash flush cycles to prevent data loss on power faults.
Recommended
Replacement Sourcing and DDR3-to-DDR4 Migration
The K4A4G165WF-BCRC is a frequent target for replacement sourcing as DDR3 inventory ages: Samsung's DDR4 family operates at 1.2V versus 1.5V for DDR3, consuming roughly 25% less power per Samsung's DDR4 portfolio data, while roughly doubling per-pin bandwidth. Legacy x16 DDR3 sockets (96-ball class footprints) migrating to DDR4 typically adopt this part or its F-die/WE-family siblings. The availability of multiple drop-in variants - K4A4G165WF-BCWE, K4A4G165WF-BCTD, E-die K4A4G165WE-BCRC, and cross-brand Micron MT40A256M16GE-075E:B with the same JEDEC x16 ballout - gives procurement teams multiple qualified sources for continuity. Note DDR4 is not backward compatible with DDR3 controllers; a controller redesign is required for genuine migrations.
Recommended
Recommended Products Summary
Engineering reference data for K4A4G165WF-BCRC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A4G165WF-BCWE | K4A4G165WF-BCTD | K4A4G165WE-BCRC | MT40A256M16GE-075E:B |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Speed Grade | DDR4-2400 | DDR4-2400 | DDR4-2400 | DDR4-2400 | DDR4-2400 (-075E, CL17) |
| Supply Voltage | 1.2 V (1.14-1.26 V) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | Samsung F-die | Samsung F-die | Samsung F-die | Samsung E-die | Micron 8Gb-based die |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
Key Differentiators
- Newer F-die core for long-term supply continuity (vs K4A4G165WE-BCRC)
- Cross-brand second sourcing on identical JEDEC ballout (vs MT40A256M16GE-075E:B)
- Trade-off: commercial temperature range only (vs K4A4G085WF-BITD)
Design Notes
Route DDR4 clock and command/address lines in fly-by topology with length matching within the datasheet skew budget, and match each DQS strobe pair to its byte lane of DQ. The K4A4G165WF-BCRC's on-die termination and ZQ calibration (use a 240 ohm, 1% resistor on the ZQ ball) eliminate most external termination, but impedance discontinuities from vias and connector breaks still degrade margins at DDR4-2400. Run controller write-leveling and read training on every boot; do not reuse DDR3 fixed-delay settings.
Supply the device from a dedicated 1.2V rail with the operating window of 1.14V to 1.26V per the datasheet; use a regulator such as the TI TPS54218 family with a soft-start and sufficient transient response for DRAM activation surges. Estimated: peak DDR4 activation current transients can approach several hundred mA per device at DDR4-2400; a 10uF ceramic at each VDD ball pair plus bulk capacitance near the regulator prevents droop below the 1.14V minimum floor.
Place the K4A4G165WF-BCRC within 50 mm of the controller memory interface when possible and reference all DDR4 signals to a continuous ground plane. Keep the ZQ resistor within 5 mm of the ZQ ball with a direct ground via. Avoid routing DDR4 across plane splits; split-plane crossings cause impedance discontinuities that manifest as marginal eye diagrams during temperature cycling.
Confirm the exact speed-bin suffix on incoming reels: Samsung family coding differs between -BCRC, -BCWE, and -BCTD bins, and controller training tables keyed to one bin may violate timing limits on another. Also remember the 0C to +95C ambient rating - industrial designs needing sub-zero operation must use IT-grade variants (e.g., -BITD). Do not hot-swap; DDR4 requires full power-rail sequencing via the reset pin.
Compliance Information
RoHS compliance per Samsung standard DRAM environmental policy and distributor listings; formal RoHS/REACH certificates should be requested from Samsung Semiconductor. Not an automotive AEC-Q100 product.
