K4A4G165WF-BCRC vs K4A4G165WD-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WF-BCRC disebabkan oleh Samsung Electronics dan K4A4G165WD-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
K4A4G165WF-BCRC ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A4G165WF-BCRC | K4A4G165WD-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $17.08 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Grade | DDR4-2400 | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Kemasan | FBGA-96 (TFBGA) | FBGA-96 |
| Die Type | Samsung 4Gb F-die | — |
| Bank / Bank Group Architecture | 8 banks, bank groups | — |
| Data Mask | Supported (DM) | — |
| CRC / CA Parity | Supported | — |
| ZQ Calibration | Supported | — |
| Dynamic ODT | Supported | — |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| Suhu Operasi | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (lead-free suffix) |
| Kadar Data | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Antaramuka | — | DDR4 (synchronous, source-synchronous strobe) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |