K4A8G085WB-BCPB vs K4A8G045WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and K4A8G045WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB ✓ Active
Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Active

Specification Comparison

Parameter K4A8G085WB-BCPB K4A8G045WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $13.78 $2.95
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
Organization 1G x 8 2G x 4
Supply Voltage 1.2 V (nominal) —
Data Rate 3200 Mbps (PC4-25600) —
Speed Grade BC —
CAS Latency (CL) 22 —
Burst Length 8 —
Bank Architecture 16 banks (4 bank groups) —
Refresh Interval 7.8 us (up to 85C) —
Interface Type SSTL-12 —
Termination ODT / dynamic ODT —
Self-Refresh Temperature-Compensated Self-Refresh (TCSR) —
Package 78-ball FBGA 78-ball FBGA (PBGA78)
Package Dimensions 11 mm x 11 mm —
Mounting Type Surface Mount (BGA) Surface Mount
Operating Mode DLL enabled —
RoHS Status Compliant Compliant
Speed — 2400 Mbps
Supply Voltage (VDD/VDDQ) — 1.2 V
Process Technology — Samsung B-die
Interface — CMOS, differential clock (CK/CK#)
Refresh Cycles — 8192
Maximum Supply Current — 211.7 mA
Operating Temperature — 0 C to 85 C
Terminals — 78
Key DDR4 Features — Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode — Timing specified for DLL-enabled operation

Datasheets & Resources

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