K4A8G085WB-BCPB vs K4A8G045WB-BCRC 对比

详细并排对比 K4A8G085WB-BCPB 出自 Samsung Electronics 和 K4A8G045WB-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB ✓ 量产中
Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ 量产中

规格对比

参数 K4A8G085WB-BCPB K4A8G045WB-BCRC
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $13.78 $2.95
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 1G x 8 2G x 4
电源电压 1.2 V (nominal) —
数据速率 3200 Mbps (PC4-25600) —
Speed Grade BC —
CAS Latency (CL) 22 —
Burst Length 8 —
Bank Architecture 16 banks (4 bank groups) —
Refresh Interval 7.8 us (up to 85C) —
接口类型 SSTL-12 —
Termination ODT / dynamic ODT —
Self-Refresh Temperature-Compensated Self-Refresh (TCSR) —
封装 78-ball FBGA 78-ball FBGA (PBGA78)
Package Dimensions 11 mm x 11 mm —
安装类型 Surface Mount (BGA) Surface Mount
Operating Mode DLL enabled —
RoHS 状态 Compliant Compliant
Speed — 2400 Mbps
Supply Voltage (VDD/VDDQ) — 1.2 V
Process Technology — Samsung B-die
接口 — CMOS, differential clock (CK/CK#)
Refresh Cycles — 8192
Maximum Supply Current — 211.7 mA
工作温度 — 0 C to 85 C
Terminals — 78
Key DDR4 Features — Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode — Timing specified for DLL-enabled operation

数据手册与资源

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