K4A8G085WB-BCPB vs K4A8G085WB-BICH Comparison
Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and K4A8G085WB-BICH by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BCPB | K4A8G085WB-BICH |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.78 | $4.96 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V (nominal) | 1.2V |
| Data Rate | 3200 Mbps (PC4-25600) | 2400 Mbps (DDR4-2400) |
| Speed Grade | BC | — |
| CAS Latency (CL) | 22 | — |
| Burst Length | 8 | BL8, BL16 |
| Bank Architecture | 16 banks (4 bank groups) | — |
| Refresh Interval | 7.8 us (up to 85C) | — |
| Interface Type | SSTL-12 | — |
| Termination | ODT / dynamic ODT | — |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) | — |
| Package | 78-ball FBGA | 78-ball FBGA |
| Package Dimensions | 11 mm x 11 mm | — |
| Mounting Type | Surface Mount (BGA) | — |
| Operating Mode | DLL enabled | — |
| RoHS Status | Compliant | — |
| Operating Temperature | — | 0°C to 85°C |
| Max Supply Current | — | 170mA |
| CAS Latency | — | Programmable |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Die Revision | — | B-die |