K4A8G085WB-BCRC vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G085WB-BCRC by Samsung Electronics and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC β Active
Specification Comparison
| Parameter | K4A8G085WB-BCRC | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.80 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 2400 Mbps | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0Β°C to 85Β°C | 0Β°C to +95Β°C (TC) |
| Package | 78-ball FBGA | 96-ball FBGA |
| Number of Terminals | 78 | β |
| Refresh Cycles | 8192 | β |
| Access Time | 0.175 ns | β |
| Technology | CMOS | β |
| Burst Length | 8 and 4 | β |
| On-Die Termination | Yes | Yes (ODT) |
| Auto-Refresh | Yes | β |
| Self-Refresh | Yes | β |
| RoHS | Compliant | Compliant |
| Total Density | β | 8 Gb |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| ZQ Calibration | β | Yes |
| Data Mask | β | Yes |