K4A8G085WB-BCRC vs K4A8G165WB-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BCRC sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ NakahandaSamsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BCRC | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 1G x 8 | 512M x 16 |
| Rate ng Data | 2400 Mbps | 2666 Mbps |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0°C to 85°C | 0C to +85C |
| Packhaging | 78-ball FBGA | 96FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |
| Interface | — | DDR4 (parallel, double data rate) |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Tindminan RoHS | — | Compliant (per JLCPCB listing: ROHS) |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |