K4A8G085WB-BCRC vs K4A8G165WB-BCTD Perbandingan
Perbandingan bersamaan detil K4A8G085WB-BCRC dari Samsung Electronics dan K4A8G165WB-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ AktifSamsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G085WB-BCRC | K4A8G165WB-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 512M x 16 |
| Laju Data | 2400 Mbps | 2666 Mbps |
| Tegangan Pemuat | 1.2 V | — |
| Suhu Kerja | 0°C to 85°C | 0C to +85C |
| Paket | 78-ball FBGA | 96FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Tipe Mounting | — | Surface Mount (BGA) |
| Antarmuka | — | DDR4 (parallel, double data rate) |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Status RoHS | — | Compliant (per JLCPCB listing: ROHS) |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |