K4A8G085WB-BICH vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BICH | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.96 | $6.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | — |
| Organization | 1G x 8 | — |
| Supply Voltage | 1.2V | 1.2 V |
| Data Rate | 2400 Mbps (DDR4-2400) | 3200 Mbps |
| Package | 78-ball FBGA | 78-FBGA |
| Operating Temperature | 0°C to 85°C | 0°C to +85°C |
| Max Supply Current | 170mA | — |
| Burst Length | BL8, BL16 | — |
| CAS Latency | Programmable | [DATA_NEEDED: CL value] |
| On-Die ECC | Yes | — |
| Data Bus Inversion | Yes | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Die Revision | B-die | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Mounting Type | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS Status | — | Compliant |
| Halogen Free | — | Yes |