K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
MPN: K4A8G085WB-BIWE ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
Drop-in alternatives for K4A8G085WB-BIWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G085WG-BIWE
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G085WB-BCPB
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G085WB-BCTD
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G085WB-BICH
✅ Drop-In✓ 99,999 In Stock
$4.96 / Unit
View Datasheet →K4A8G085WB-BCRC
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View Datasheet →H5AN8G6NAFR-UHC
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View Datasheet →MT40A512M16TB-062E:R
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →K4A8G085WB-BIWE Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gb |
| Memory Organization | 1G x 8 |
| Data Rate | 3200 Mbps |
| Supply Voltage | 1.2 V |
| Operating Temperature | 0°C to +85°C |
| Package | 78-FBGA |
| Mounting Type | Surface Mount |
| Memory Interface | Parallel |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS Latency | [DATA_NEEDED: CL value] |
| Refresh | Auto-refresh, self-refresh |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
K4A8G085WB-BIWE Pin Configuration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WB-BIWE is suitable for 6 applications: Server Memory, Networking Equipment, Industrial Embedded Systems, High-Performance Computing, Consumer Electronics, Automotive Infotainment.
Server Memory
The K4A8G085WB-BIWE provides high-density 8Gb DDR4 memory for server applications, enabling large memory pools for virtualization, cloud computing, and data analytics. Its 3200 Mbps data rate and 1.2V operation deliver high bandwidth with low power consumption, making it ideal for enterprise servers where performance-per-watt is critical. The 78-FBGA package allows high-density DIMM designs, and the 1G x 8 organization supports ECC and advanced memory features.
Recommended
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G085WB-BIWE provides fast, reliable memory for packet buffering and routing tables. Its 3200 Mbps data rate ensures low-latency data processing, while the 1.2V supply reduces power dissipation in dense line cards. The 78-FBGA package is suitable for compact PCB layouts, and the 0°C to +85°C temperature range covers typical networking environments.
Recommended
Industrial Embedded Systems
The K4A8G085WB-BIWE is well-suited for industrial embedded systems such as PLCs, HMI panels, and edge computing devices. Its 8Gb density provides ample memory for real-time control and data logging, while the 0°C to +85°C operating range ensures reliability in factory environments. The 1.2V operation reduces heat generation, and the 78-FBGA package allows for compact, rugged designs. The device's high speed supports fast data acquisition and processing.
Recommended
High-Performance Computing
For high-performance computing (HPC) applications, the K4A8G085WB-BIWE delivers the bandwidth and capacity needed for complex simulations and data-intensive workloads. Its 3200 Mbps data rate and 8Gb density enable large memory footprints, while the 1.2V supply helps manage power in dense compute nodes. The 78-FBGA package supports high-speed signal integrity, and the device's low latency enhances overall system performance.
Recommended
Consumer Electronics
In consumer electronics such as high-end routers, smart TVs, and gaming consoles, the K4A8G085WB-BIWE provides fast, efficient memory for smooth multitasking and media streaming. Its 8Gb density supports large applications, while the 3200 Mbps data rate ensures responsive performance. The 1.2V operation extends battery life in portable devices, and the 78-FBGA package enables slim form factors.
Recommended
Automotive Infotainment
The K4A8G085WB-BIWE can be used in automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports complex user interfaces, while the 3200 Mbps data rate enables smooth video playback. The 0°C to +85°C temperature range covers automotive cabin environments, and the 1.2V operation reduces power consumption in vehicles.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WB-BIWE — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WG-BIWE | K4A8G085WB-BCPB | K4A8G085WB-BCTD | H5AN8G6NAFR-UHC | MT40A512M16TB-062E:R |
|---|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | Micron Technology |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C | 0°C to +95°C |
| Temperature Grade | Commercial | Commercial | Commercial | Commercial | Industrial | Industrial |
Key Differentiators
- Samsung B-die process technology (vs H5AN8G6NAFR-UHC)
- Wide availability and ecosystem support (vs MT40A512M16TB-062E:R)
- Multiple temperature grade options (vs K4A8G085WB-BCPB)
Design Notes
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and ensure low-impedance connections to VSS and VSSQ. Follow DDR4 layout guidelines for impedance matching (typically 40-50 ohms) and length matching for data and address lines.
Maintain proper signal integrity by using controlled impedance traces and minimizing stub lengths. Use on-die termination (ODT) settings as recommended in the datasheet to reduce reflections. Keep the clock and strobe lines length-matched to ensure proper timing.
Ensure adequate thermal management by providing sufficient copper area and airflow around the device. The 78-FBGA package has a thermal resistance that should be considered in high-temperature environments. Monitor junction temperature to stay within the specified operating range.
Compliance Information
RoHS compliant per Samsung product page. Not AEC-Q100 qualified - this is a memory component, not an automotive IC.
