K4A8G085WB-BICR vs MT40A1G8SA-075:E Comparison

Detailed side-by-side comparison of K4A8G085WB-BICR by Samsung Electronics and MT40A1G8SA-075:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BICR

K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial

K4A8G085WB-BICR βœ“ Active
Micron Technology
MT40A1G8SA-075:E

MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron

MT40A1G8SA-075:E βœ“ Active

Specification Comparison

Parameter K4A8G085WB-BICR MT40A1G8SA-075:E
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.25 $6.30
Memory Type DDR4 SDRAM SDRAM - DDR4
Density 8 Gb β€”
Organization 1G x 8 β€”
Data Rate 2400 Mbps 2666 MT/s
Supply Voltage 1.2 V (VDD/VDDQ) β€”
Number of Banks 16 β€”
Refresh Cycles 8192 β€”
Package 78-ball FBGA 78-FBGA (7.5x11 mm)
Pin Count 78 β€”
Mounting Type Surface Mount Surface Mount
Temperature Grade Industrial (I-grade) β€”
Operating Temperature Range [DATA_NEEDED: exact temperature range for BICR industrial suffix] 0Β°C to +95Β°C
Die / Process Samsung 8Gb B-die DDR4 β€”
Speed Grade DDR4-2400 (PC4-19200) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Refresh Management Row refresh, auto-refresh and self-refresh supported β€”
Memory Size β€” 8Gbit (1G x 8)
Interface β€” Parallel
Clock Frequency β€” 1.33 GHz
Supply Voltage (VDD/VDDQ) β€” 1.2V Β±60mV
VPP Supply Voltage β€” 2.5V (-125mV, +250mV)
Refresh Time β€” 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C
Write Leveling β€” Supported
Dynamic On-Chip Termination β€” Supported
CRC Function β€” Supported
Data Mask Function β€” Supported

Datasheets & Resources

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