K4A8G085WB-BICR vs MT40A1G8SA-075:E 比較
詳細並排比較 K4A8G085WB-BICR 由 Samsung Electronics 與 MT40A1G8SA-075:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ 啟用中規格比較
| 參數 | K4A8G085WB-BICR | MT40A1G8SA-075:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | — |
| 資料速率 | 2400 Mbps | 2666 MT/s |
| 供應電壓 | 1.2 V (VDD/VDDQ) | — |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| 封裝 | 78-ball FBGA | 78-FBGA (7.5x11 mm) |
| 腳位數 | 78 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | Industrial (I-grade) | — |
| 工作溫度範圍 | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | 0°C to +95°C |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| 記憶體容量 | — | 8Gbit (1G x 8) |
| 介面 | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| CRC Function | — | Supported |
| Data Mask Function | — | Supported |