K4A8G085WB-BICR vs MT40A1G8SA-075:E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BICR sa pamamagitan ng Samsung Electronics at MT40A1G8SA-075:E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BICR | MT40A1G8SA-075:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gb | — |
| Organisasyon | 1G x 8 | — |
| Rate ng Data | 2400 Mbps | 2666 MT/s |
| Volte ng Pagbibigay | 1.2 V (VDD/VDDQ) | — |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| Packhaging | 78-ball FBGA | 78-FBGA (7.5x11 mm) |
| Bilang ng Pin | 78 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature Grade | Industrial (I-grade) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | 0°C to +95°C |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| Laki ng Memory | — | 8Gbit (1G x 8) |
| Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| CRC Function | — | Supported |
| Data Mask Function | — | Supported |