K4A8G085WB-BIWE vs MT40A512M16TB-062E:R Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WB-BIWE | MT40A512M16TB-062E:R |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | 8 Gbit (512M x 16) |
| Memory Organization | 1G x 8 | — |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0°C to +85°C | 0°C to +95°C |
| Package | 78-FBGA | 96-FBGA (7.5x13 mm) |
| Mounting Type | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS Latency | [DATA_NEEDED: CL value] | 22 |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Clock Frequency | — | 1600 MHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Data Bus Width | — | 16 bits |
| Refresh Time | — | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| I/O Type | — | 1.2V pseudo open-drain |
| Features | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |