K4A8G085WB-BIWE vs MT40A512M16TB-062E:R Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIWE
K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G085WB-BIWE β ActiveMicron Technology
MT40A512M16TB-062E:R
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BIWE | MT40A512M16TB-062E:R |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | 8 Gbit (512M x 16) |
| Memory Organization | 1G x 8 | β |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage | 1.2 V | β |
| Operating Temperature | 0Β°C to +85Β°C | 0Β°C to +95Β°C |
| Package | 78-FBGA | 96-FBGA (7.5x13 mm) |
| Mounting Type | Surface Mount | β |
| Memory Interface | Parallel | β |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | β |
| CAS Latency | [DATA_NEEDED: CL value] | 22 |
| Refresh | Auto-refresh, self-refresh | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Clock Frequency | β | 1600 MHz |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Voltage | β | 2.5V (-125mV, +250mV) |
| Interface | β | Parallel |
| Data Bus Width | β | 16 bits |
| Refresh Time | β | 8192 cycles (64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C) |
| I/O Type | β | 1.2V pseudo open-drain |
| Features | β | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |