K4A8G085WC-BCTD vs MT40A1G8SA-075:E Comparison

Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and MT40A1G8SA-075:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WC-BCTD

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Last Time Buy
Micron Technology
MT40A1G8SA-075:E

MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron

MT40A1G8SA-075:E βœ“ Active

Specification Comparison

Parameter K4A8G085WC-BCTD MT40A1G8SA-075:E
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Last_time_buy Active
Stock Status In Stock In Stock
Unit Price (USD) $50.85 $6.30
Memory Type DDR4 SDRAM SDRAM - DDR4
Density 8 Gb β€”
Organization 1G x 8 β€”
Data Rate 2666 Mbps (PC4-2133) 2666 MT/s
Supply Voltage (VDD/VDDQ) 1.2 V (1.14 V to 1.26 V) 1.2V Β±60mV
Package 78-ball FBGA (78FBGA) 78-FBGA (7.5x11 mm)
Ball Pitch 0.8 mm β€”
Operating Temperature 0C to +95C β€”
Standard Operating Temp Range 0C to +85C β€”
Burst Length 8 (chop 4) β€”
Auto Precharge Yes β€”
Asynchronous Reset Yes β€”
CRC Function Yes Supported
ZQ Calibration Yes β€”
Dynamic ODT Yes β€”
Data Mask Yes β€”
Interface Type Synchronous, parallel β€”
Mounting Type Surface Mount Surface Mount
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Memory Size β€” 8Gbit (1G x 8)
Interface β€” Parallel
Clock Frequency β€” 1.33 GHz
VPP Supply Voltage β€” 2.5V (-125mV, +250mV)
Operating Temperature Range β€” 0Β°C to +95Β°C
Refresh Time β€” 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C
Write Leveling β€” Supported
Dynamic On-Chip Termination β€” Supported
Data Mask Function β€” Supported

Datasheets & Resources

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