K4A8G085WC-BCTD vs MT40A1G8SA-075:E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCTD disebabkan oleh Samsung Electronics dan MT40A1G8SA-075:E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | K4A8G085WC-BCTD | MT40A1G8SA-075:E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Masa Terakhir Dibeli | Aktif |
| Jenis Ingatan | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 2666 Mbps (PC4-2133) | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | 1.2V ±60mV |
| Kemasan | 78-ball FBGA (78FBGA) | 78-FBGA (7.5x11 mm) |
| Ball Pitch | 0.8 mm | — |
| Suhu Operasi | 0C to +95C | — |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | Supported |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Jenis Antaramuka | Synchronous, parallel | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Saiz Ingatan | — | 8Gbit (1G x 8) |
| Antaramuka | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Gambaran Suhu Operasi | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| Data Mask Function | — | Supported |