K4A8G085WC-BCTD vs MT40A1G8SA-075:E 比較
詳細並排比較 K4A8G085WC-BCTD 由 Samsung Electronics 與 MT40A1G8SA-075:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最後購買機會規格比較
| 參數 | K4A8G085WC-BCTD | MT40A1G8SA-075:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 最後購買 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | — |
| 資料速率 | 2666 Mbps (PC4-2133) | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | 1.2V ±60mV |
| 封裝 | 78-ball FBGA (78FBGA) | 78-FBGA (7.5x11 mm) |
| Ball Pitch | 0.8 mm | — |
| 工作溫度 | 0C to +95C | — |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | Supported |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| 介面類型 | Synchronous, parallel | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| 記憶體容量 | — | 8Gbit (1G x 8) |
| 介面 | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| 工作溫度範圍 | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| Data Mask Function | — | Supported |