K4A8G165WB-BCRC vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BCRC | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.57 | $60.00 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb (1 GB) | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | 2400 Mbps (PC4-19200) | 2666 Mbps |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | — |
| Technology | CMOS DRAM, Samsung 8Gb B-die | — |
| Package | 96-ball FBGA (PBGA96) | FBGA-96 |
| Ball Pitch | 0.8 mm | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature | -40C to +95C | 0°C to +95°C |
| Interface | DDR4 (Double Data Rate, synchronous) | — |
| On-Die Termination | Yes (ODT with dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| CRC / CA Parity | Yes (CRC function) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| RoHS Status | Compliant | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| Operating Current (IDD2N) | — | 28 mA |
| Operating Current (IDD4R) | — | 45 mA |
| Burst Length | — | 8 (BC4) |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Row Address Bits | — | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | — | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS | — | Compliant |