K4A8G165WB-BCRC vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSamsung Electronics
K4A8G165WB-BCPB
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.57 | $2.30 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | β |
| Memory Size | 8 Gb (1 GB) | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps (PC4-19200) | β |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V (1.14 V to 1.26 V) |
| Technology | CMOS DRAM, Samsung 8Gb B-die | β |
| Package | 96-ball FBGA (PBGA96) | 96-ball FBGA (TFBGA-96) |
| Ball Pitch | 0.8 mm | β |
| Mounting Type | Surface Mount | β |
| Operating Temperature | -40C to +95C | 0Β°C to 85Β°C |
| Interface | DDR4 (Double Data Rate, synchronous) | β |
| On-Die Termination | Yes (ODT with dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| CRC / CA Parity | Yes (CRC function) | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Refresh | Auto-refresh and self-refresh | Auto and Self Refresh |
| RoHS Status | Compliant | Compliant |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Speed Grade | β | 2133 Mbps (PC4-17000) |
| Burst Length | β | 8 (BL8) |
| Burst Type | β | Sequential and Interleave |
| CAS Latency | β | Programmable (e.g., 15, 16, 18) |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| Package Shape | β | RECTANGULAR |
| Terminal Position | β | BOTTOM |