K4A8G165WB-BCRC vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSamsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Interface | Parallel (DDR4 SDRAM bus) | DDR4 (synchronous, double data rate) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Data Rate | 2400 Mbps/pin (DDR4-2400) | 2133 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Package | 96-ball FBGA (PBGA96) | 96FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +95C | 0C to +85C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Bank Groups | — | DDR4 bank-group architecture |
| RoHS Status | — | Compliant (per Lisleapex listing) |
| Refresh | — | [DATA_NEEDED: refresh specification] |