K4A8G165WB-BCRC vs K4A8G165WB-BCPB 比較
詳細並排比較 K4A8G165WB-BCRC 由 Samsung Electronics 與 K4A8G165WB-BCPB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCRC | K4A8G165WB-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| 記憶體容量 | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| 介面 | Parallel (DDR4 SDRAM bus) | DDR4 (synchronous, double data rate) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 資料速率 | 2400 Mbps/pin (DDR4-2400) | 2133 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| 封裝 | 96-ball FBGA (PBGA96) | 96FBGA (TFBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40C to +95C | 0C to +85C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| 組織 | — | 512M x 16 |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Bank Groups | — | DDR4 bank-group architecture |
| RoHS 狀態 | — | Compliant (per Lisleapex listing) |
| Refresh | — | [DATA_NEEDED: refresh specification] |