K4A8G165WB-BCRC vs K4A8G165WB-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G165WB-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCRC | K4A8G165WB-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Antaramuka | Parallel (DDR4 SDRAM bus) | DDR4 (synchronous, double data rate) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Kadar Data | 2400 Mbps/pin (DDR4-2400) | 2133 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Kemasan | 96-ball FBGA (PBGA96) | 96FBGA (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +95C | 0C to +85C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Bank Groups | — | DDR4 bank-group architecture |
| Status RoHS | — | Compliant (per Lisleapex listing) |
| Refresh | — | [DATA_NEEDED: refresh specification] |