K4A8G165WB-BCTD vs AS4C512M16D4-75BIN Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and AS4C512M16D4-75BIN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCTD | AS4C512M16D4-75BIN |
|---|---|---|
| Brand | Samsung Electronics | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $8.99 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | — |
| Total Density | 8 Gb | — |
| Data Rate | 2666 Mbps/pin (PC4-2666) | 2666 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA | 96-FBGA (7.5x13) |
| Operating Temperature | 0°C to +95°C (TC) | -40°C to +95°C |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Memory Size | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| Mounting Type | — | Surface Mount |
| Interface | — | POD |
| Number of Pins | — | 96 |
| RoHS Status | — | Compliant |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |