K4A8G165WB-BCTD vs AS4C512M16D4-75BIN 对比
详细并排对比 K4A8G165WB-BCTD 出自 Samsung Electronics 和 AS4C512M16D4-75BIN 出自 Alliance Memory。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ 量产中规格对比
| 参数 | K4A8G165WB-BCTD | AS4C512M16D4-75BIN |
|---|---|---|
| 品牌 | Samsung Electronics | Alliance Memory |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $37.00 | $8.99 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | 512M x 16 | — |
| Total Density | 8 Gb | — |
| 数据速率 | 2666 Mbps/pin (PC4-2666) | 2666 Mbps |
| 电源电压 | 1.2 V | 1.2 V |
| 封装 | 96-ball FBGA | 96-FBGA (7.5x13) |
| 工作温度 | 0°C to +95°C (TC) | -40°C to +95°C |
| CAS 延迟 | [DATA_NEEDED: CL value] | — |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| 存储容量 | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| 安装类型 | — | Surface Mount |
| 接口 | — | POD |
| 引脚数 | — | 96 |
| RoHS 状态 | — | Compliant |
| 特性 | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |