K4A8G165WB-BCTD vs K4A8G165WC-BCTD Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and K4A8G165WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCTD
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCTD | K4A8G165WC-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $41.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gb | β |
| Data Rate | 2666 Mbps/pin (PC4-2666) | 2666 Mbps (DDR4-2666) |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Operating Temperature | 0Β°C to +95Β°C (TC) | 0C to +95C |
| CAS Latency | [DATA_NEEDED: CL value] | β |
| tRCD | [DATA_NEEDED: tRCD value] | β |
| tRP | [DATA_NEEDED: tRP value] | β |
| Refresh | Auto-refresh, self-refresh | β |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | Yes (240 ohm resistor to GND) |
| Data Mask | Yes | β |
| RoHS | Compliant | β |
| Density | β | 8 Gb |
| Operating Voltage Range | β | 1.14 V to 1.26 V |
| Clock Frequency | β | 1.333 GHz |
| Mounting Type | β | Surface Mount |
| Die Revision | β | C-die |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| CRC Function | β | Yes |
| Dynamic On-Chip Termination (ODT) | β | Yes |
| Data Mask Function | β | Yes |
| RoHS Status | β | Compliant |