K4A8G165WB-BCTD vs K4A8G165WC-BCTD Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and K4A8G165WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSamsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCTD | K4A8G165WC-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x16 |
| Data Rate | 2666 Mbps | 2666 Mbps (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | 0C to +95C |
| Package | 96FBGA | 96FBGA |
| Die Generation | B-die | C-die (1Y nm-class process) |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | — |
| Data Mask | Supported (DM per x16 lane) | Yes (x16 DM) |
| ZQ Calibration | Supported | Yes |
| Dynamic On-Die Termination | Supported | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| RoHS Status | Compliant (per JLCPCB listing: ROHS) | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Clock Frequency | — | 1.333 GHz |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| CRC Function | — | Yes (write CRC) |
| On-Die Termination | — | Dynamic ODT |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |