K4A8G165WB-BCTD vs K4A8G165WC-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCTD sa pamamagitan ng Samsung Electronics at K4A8G165WC-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ NakahandaSamsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCTD | K4A8G165WC-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 512M x 16 | 512M x16 |
| Rate ng Data | 2666 Mbps | 2666 Mbps (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0C to +85C | 0C to +95C |
| Packhaging | 96FBGA | 96FBGA |
| Die Generation | B-die | C-die (1Y nm-class process) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | — |
| Data Mask | Supported (DM per x16 lane) | Yes (x16 DM) |
| ZQ Calibration | Supported | Yes |
| Dynamic On-Die Termination | Supported | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Tindminan RoHS | Compliant (per JLCPCB listing: ROHS) | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Clock Frequency | — | 1.333 GHz |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| CRC Function | — | Yes (write CRC) |
| On-Die Termination | — | Dynamic ODT |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |