K4A8G165WB-BCTD vs MT40A512M16JY-075E Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WB-BCTD | MT40A512M16JY-075E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $30.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gb | — |
| Data Rate | 2666 Mbps/pin (PC4-2666) | 2666 MT/s |
| Supply Voltage | 1.2 V | — |
| Package | 96-ball FBGA | 96-FBGA (8x14) |
| Operating Temperature | 0°C to +95°C (TC) | — |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Memory Size | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Operating Temperature Range | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| RoHS Status | — | Compliant |
| Features | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |