K4A8G165WB-BIWE vs AS4C512M16D4A-62BIN Comparison
Detailed side-by-side comparison of K4A8G165WB-BIWE by Samsung Electronics and AS4C512M16D4A-62BIN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BIWE | AS4C512M16D4A-62BIN |
|---|---|---|
| Brand | Samsung Electronics | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.22 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps per pin |
| Supply Voltage | 1.2 V | 1.14V ~ 1.26V (nominal 1.2V) |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C |
| Package | 96-ball FBGA | 96-FBGA (7.5x13mm) |
| Interface | Parallel | POD (Pseudo Open Drain) |
| Burst Length | 8, 16 | 8 (with burst chop 4) |
| CAS Latency | [DATA_NEEDED: CAS Latency] | Programmable (e.g., 22 cycles) |
| Refresh | Auto-refresh, Self-refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes | — |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 96 | — |
| Memory Size | — | 8 Gbit |
| Clock Rate | — | 1600 MHz |
| Lead Free | — | Yes |