K4A8G165WB-BIWE vs YZ48G16V-F9HPI-M Comparison
Detailed side-by-side comparison of K4A8G165WB-BIWE by Samsung Electronics and YZ48G16V-F9HPI-M by Loongtion. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WB-BIWE | YZ48G16V-F9HPI-M |
|---|---|---|
| Brand | Samsung Electronics | Loongtion |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.22 | $8.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | -40°C to +95°C | — |
| Package | 96-ball FBGA | FBGA96 |
| Interface | Parallel | DDR4 |
| Burst Length | 8, 16 | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh | Auto-refresh, Self-refresh | Auto-refresh |
| On-Die Termination | Yes | — |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 96 | — |
| Operating Temperature Range | — | -40°C to +85°C |
| Pin Count | — | 96 |
| RoHS Status | — | Compliant |
| Industrial Grade | — | Yes |
| Compatible with | — | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B |
| Data Bus Width | — | 16 bits |