K4A8G165WC-BCPB vs K4A8G165WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G165WC-BCPB by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G165WC-BCPB K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung

K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung

K4A8G165WC-BCPB ✓ Active
Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC ✓ Active

Specification Comparison

Parameter K4A8G165WC-BCPB K4A8G165WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.31 $12.57
Memory Type DDR4 SDRAM (volatile DRAM) DDR4 SDRAM (DRAM, volatile)
Memory Size 8 Gb 8 Gb (1 GB)
Memory Organization 512M x 16 512M x 16
Data Rate DDR4-2133 (2133 Mbps/pin) 2400 Mbps (PC4-19200)
Supply Voltage 1.2 V 1.2 V (1.14 V to 1.26 V)
Operating Voltage Range 1.14 V to 1.26 V —
Interface DDR4 (16-bit data bus) DDR4 (Double Data Rate, synchronous)
Package 96-ball FBGA (TFBGA) 96-ball FBGA (PBGA96)
Die Generation C-die (1Y nm class) —
Mounting Type Surface Mount Surface Mount
Operating Temperature 0C to +95C -40C to +95C
Features Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask —
Termination On-die termination (ODT), dynamic —
MSL Level [DATA_NEEDED: MSL Level] —
RoHS Status Compliant Compliant
Standard JEDEC DDR4 SDRAM —
Technology — CMOS DRAM, Samsung 8Gb B-die
Ball Pitch — 0.8 mm
On-Die Termination — Yes (ODT with dynamic ODT)
ZQ Calibration — Yes
CRC / CA Parity — Yes (CRC function)
Auto Precharge — Yes
Asynchronous Reset — Yes
Refresh — Auto-refresh and self-refresh

Datasheets & Resources

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