K4A8G165WC-BCTD vs K4A8G165WC-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WC-BCTD by Samsung Electronics and K4A8G165WC-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD ✓ ActiveSamsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCTD | K4A8G165WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.20 | $1.31 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 2666 Mbps (DDR4-2666) | DDR4-2133 (2133 Mbps/pin) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| Clock Frequency | 1.333 GHz | — |
| Operating Temperature | 0C to +95C | 0C to +95C |
| Package | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Die Revision | C-die | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes (240 ohm resistor to GND) | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| RoHS Status | Compliant | Compliant |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Interface | — | DDR4 (16-bit data bus) |
| Die Generation | — | C-die (1Y nm class) |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| MSL Level | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |