K4A8G165WC-BCTD vs MT40A512M16LY-062E-ATE Comparison
Detailed side-by-side comparison of K4A8G165WC-BCTD by Samsung Electronics and MT40A512M16LY-062E-ATE by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD ✓ ActiveMicron Technology
MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MT40A512M16LY-062E-ATE ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCTD | MT40A512M16LY-062E-ATE |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.20 | $34.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps (DDR4-2666) | 3200 MT/s (DDR4-3200) |
| Supply Voltage | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1.333 GHz | 1.6 GHz |
| Operating Temperature | 0C to +95C | -40C to +105C (automotive) |
| Package | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA (7.5 x 13.5 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Die Revision | C-die | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes (240 ohm resistor to GND) | Yes |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| RoHS Status | Compliant | Compliant |
| Access Time | — | 19 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VPP) | — | 2.5 V |
| Ball Pitch | — | 0.8 mm |
| Speed Grade | — | -062E (0.625 ns tCK) |
| On-Die Termination | — | Yes (ODT) |
| Data Mask | — | Yes (DM) |
| Refresh Mode | — | Auto self-refresh |