K4AAG165WM-BCRC vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of K4AAG165WM-BCRC by Samsung Electronics and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
K4AAG165WM-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4AAG165WM-BCRC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $22.60 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 8 Gb |
| Organization | 1G x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Interface | DDR4 (SSTL-12) | 16-bit I/O |
| Package | 96-ball FBGA | 96-ball FBGA (9mm x 13mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask Function | Yes | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] | 0°C to +95°C (case) |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency at 3200 Mbps] | — |
| RoHS Status | Compliant | — |
| VPP Voltage | — | 2.5 V |
| Banks | — | 16 (4 bank groups) |
| Burst Length | — | 8 (BL8) |
| CAS Latency | — | Programmable (e.g., 16, 17, 18) |
| Refresh | — | Temperature-compensated self-refresh (TCSR) |
| RoHS | — | Compliant |