K4B4G1646 vs K4B4G1646Q Comparison
Detailed side-by-side comparison of K4B4G1646 by Samsung Electronics and K4B4G1646Q by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646 | K4B4G1646Q |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.96 | $6.50 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Interface | Parallel | — |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| Supply Voltage | 1.5 V (DDR3L variants 1.35 V) | 1.35V |
| Package | 96-FBGA | 96-ball FBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: Operating temperature range] |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 4Gb |
| Data Bus Width | — | 16 bits |
| Data Rate | — | 1866 Mbps (PC3-14900) |
| Die | — | Q-die |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| CAS Latency | — | Programmable |