K4B4G1646D-BCK00 vs K4B4G1646D-BMK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BCK00 by Samsung Electronics and K4B4G1646D-BMK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ ActiveSamsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCK00 | K4B4G1646D-BMK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | 1600 Mbps (PC3L-12800) |
| Data Rate | 1600 Mbps/pin | 1600 Mbps |
| Supply Voltage | 1.35V (1.283V to 1.45V) | — |
| I/O Voltage | 1.35V | — |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96FBGA (TFBGA) |
| Operating Temperature | 0°C to 95°C (Tcase) | -40°C to 95°C |
| Number of Banks | 8 | — |
| CAS Latency | 11 (at 1600 Mbps) | — |
| Burst Length | 8, 4 (with burst chop) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Voltage | — | 1.35 V |
| Die Version | — | D-die |
| RoHS Compliant | — | Yes |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Number of Functions | — | 1 |