K4B4G1646D-BCK00 vs K4B4G1646D-BMK0 Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BCK00 dari Samsung Electronics dan K4B4G1646D-BMK0 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ AktifSamsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BCK00 | K4B4G1646D-BMK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | 1600 Mbps (PC3L-12800) |
| Laju Data | 1600 Mbps/pin | 1600 Mbps |
| Tegangan Pemuat | 1.35V (1.283V to 1.45V) | — |
| I/O Voltage | 1.35V | — |
| Paket | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96FBGA (TFBGA) |
| Suhu Kerja | 0°C to 95°C (Tcase) | -40°C to 95°C |
| Number of Banks | 8 | — |
| Latensi CAS | 11 (at 1600 Mbps) | — |
| Burst Length | 8, 4 (with burst chop) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | Yes |
| Voltage | — | 1.35 V |
| Die Version | — | D-die |
| RoHS Compliant | — | Yes |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Number of Functions | — | 1 |