K4B4G1646D-BCK00 vs MT41K256M16HA-125:E Comparison
Detailed side-by-side comparison of K4B4G1646D-BCK00 by Samsung Electronics and MT41K256M16HA-125:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ ActiveMicron Technology
MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125:E ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCK00 | MT41K256M16HA-125:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $3.10 |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| Data Rate | 1600 Mbps/pin | — |
| Supply Voltage | 1.35V (1.283V to 1.45V) | — |
| I/O Voltage | 1.35V | — |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (9x14 mm) |
| Operating Temperature | 0°C to 95°C (Tcase) | — |
| Number of Banks | 8 | — |
| CAS Latency | 11 (at 1600 Mbps) | 13.75 ns |
| Burst Length | 8, 4 (with burst chop) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Clock Frequency | — | 800 MHz |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L) |
| Supply Voltage (VDDQ) | — | 1.35 V |
| Number of Pins | — | 96 |
| Mounting Type | — | Surface Mount |
| Operating Temperature Range | — | 0°C to +95°C (TC) |
| RoHS Status | — | Compliant |
| Data Bus Width | — | 16 bits |
| Logic Family | — | CMOS |