K4B4G1646D-BFMA vs MT41K256M16HA-107:E Comparison
Detailed side-by-side comparison of K4B4G1646D-BFMA by Samsung Electronics and MT41K256M16HA-107:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16HA-107:E - 4Gbit DDR3L SDRAM 933MHz | Micron
MT41K256M16HA-107:E ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BFMA | MT41K256M16HA-107:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $5.00 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 MT/s |
| Supply Voltage | 1.5V | 1.35V |
| Package | 96-ball FBGA | 96-FBGA (9x14 mm) |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| CAS Latency | Programmable | 13 (typical) |
| On-Die Termination | Yes | — |
| Temperature Range | 0°C to 95°C (case) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 933 MHz |
| Access Time | — | 20 ns |
| Mounting Type | — | Surface Mount |
| Operating Temperature | — | 0°C to 95°C (Tc) |
| Interface | — | Parallel |
| RoHS Status | — | Compliant |
| Number of Pins | — | 96 |