K4B4G1646D-BYK0 vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK0 by Samsung Electronics and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYK0 | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.90 | $2.30 |
| Memory Type | DDR3L SDRAM | — |
| Density | 4 Gbit | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.5 V compatible) | 1.35 V |
| Data Rate | 1600 Mbps (PC3-12800) | 1333 Mbps |
| Package | 96-ball FBGA | 96FBGA |
| Operating Temperature | 0°C to 85°C | 0 ~ 85 °C |
| CAS Latency | Programmable (e.g., 11, 10, 9) | Programmable |
| Burst Length | 8 (with burst chop 4) | — |
| On-Die Termination | Yes | Yes |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | Yes |
| Number of Pins | 96 | — |
| Die Revision | D-die | — |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| Internal Calibration | — | Yes |
| Die Version | — | D-die |