K4B4G1646E-BMK0 vs H5TC4G63CFR-H9J Comparison

Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and H5TC4G63CFR-H9J by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646E-BMK0 K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung

K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung

K4B4G1646E-BMK0 ✓ Active

Specification Comparison

Parameter K4B4G1646E-BMK0 H5TC4G63CFR-H9J
Brand Samsung Electronics SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $6.00
Density 4 Gb 4Gb
Organization 256M x 16 256M x 16
Speed Grade 1600 Mbps -H9 (1866 Mbps / PC3-14900)
Voltage 1.35 V —
Operating Temperature -40°C to +95°C —
Package 96-FBGA 96-ball TFBGA
Interface Parallel —
Clock Frequency 800 MHz —
Data Rate 1600 Mbps —
Memory Type DDR3L SDRAM DDR3L SDRAM
Mounting Type Surface Mount —
Auto Precharge Yes —
Asynchronous Reset Yes —
ZQ Calibration Yes —
Dynamic ODT Yes —
Data Mask Yes —
Supply Voltage (VDD/VDDQ) — 1.35V +0.100/-0.067V
Number of Terminals — 96
Temperature Grade — Industrial
Lead-Free — Yes
Halogen Free — Yes
RoHS Compliant — Yes
Clock Input — Fully differential (CK, CK)
Data Strobe — Differential (DQS, DQS)
On-Chip DLL — Yes
Data Mask (DM) — Yes

Datasheets & Resources

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