K4B4G1646E-BMK0 vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BMK0 | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to +95°C | 0°C to +95°C (TC) |
| Package | 96-FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Interface | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Data Rate | 1600 Mbps | DDR3-1600 (800 MHz) |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Mounting Type | Surface Mount | — |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | Yes |
| Supply Voltage | — | 1.35 V (1.283 V to 1.45 V) |
| CAS Latency | — | 11 (CL-tRCD-tRP) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| Self-Refresh | — | Yes |
| RoHS | — | Compliant |