K4B4G1646E-BYK0 vs H5TC4G63CFR-H9A Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK0 by Samsung Electronics and H5TC4G63CFR-H9A by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BYK0 | H5TC4G63CFR-H9A |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | — |
| Data Rate | DDR3-1600 (800 MHz) | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| Operating Temperature | 0°C to +95°C (TC) | — |
| CAS Latency | 11 (CL-tRCD-tRP) | [DATA_NEEDED: CAS latency] |
| Burst Length | 8 (fixed), 4 (burst chop) | 8, 4 (with burst chop) |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Memory Density | — | 4Gb (4294967296 bit) |
| Supply Voltage (VDD) | — | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| Operating Temperature Range | — | [DATA_NEEDED: Operating temperature range] |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Differential Clock Inputs | — | Yes (CK, CK) |
| Differential Data Strobe | — | Yes (DQS, DQS) |
| On-Chip DLL | — | Yes |
| DM (Data Mask) | — | Yes |