K4B4G1646E-BYK0 vs H5TC4G63CFR-H9A 对比
详细并排对比 K4B4G1646E-BYK0 出自 Samsung Electronics 和 H5TC4G63CFR-H9A 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BYK0 | H5TC4G63CFR-H9A |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.80 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35 V (1.283 V to 1.45 V) | — |
| 数据速率 | DDR3-1600 (800 MHz) | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] |
| 封装 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| 工作温度 | 0°C to +95°C (TC) | — |
| CAS 延迟 | 11 (CL-tRCD-tRP) | [DATA_NEEDED: CAS latency] |
| Burst Length | 8 (fixed), 4 (burst chop) | 8, 4 (with burst chop) |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Memory Density | — | 4Gb (4294967296 bit) |
| Supply Voltage (VDD) | — | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| 工作温度范围 | — | [DATA_NEEDED: Operating temperature range] |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| Differential Clock Inputs | — | Yes (CK, CK) |
| Differential Data Strobe | — | Yes (DQS, DQS) |
| On-Chip DLL | — | Yes |
| DM (Data Mask) | — | Yes |