K4B4G1646E-BYK000 vs MT41K64M16TW-107 AUT:J Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK000 by Samsung Electronics and MT41K64M16TW-107 AUT:J by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActiveMicron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYK000 | MT41K64M16TW-107 AUT:J |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.56 | $2.85 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Memory Size | 4 Gbit | 1 Gbit |
| Organization | 256M x 16 | 64M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | 933 MHz |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Package | 96-FBGA (BYK) | 96-FBGA (8 x 14 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | Parallel |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Features | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Access Time | 1.25 ns | 20 ns |
| Supply Voltage | — | 1.35 V (DDR3L), 1.5 V compatible |
| Temperature Grade | — | AUT (automotive) |
| CAS Latency | — | [DATA_NEEDED: CAS latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |
| Data Rate | — | 1866 MT/s (DDR3L-1866) |
| Termination | — | On-Die Termination (ODT) |
| Packaging | — | Tray (T/R per listing) |