K4B4G1646E-BYMA vs IS43TR16256AL-107MBLI Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMA by Samsung Electronics and IS43TR16256AL-107MBLI by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYMA | IS43TR16256AL-107MBLI |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.32 | $2.00 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.28 V to 1.575 V) | 1.35V (backward compatible to 1.5V) |
| Clock Frequency | 933 MHz | — |
| Data Rate | 1866 Mbps/pin | 1866 Mbps |
| Operating Temperature | 0°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Package | FBGA-96 | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | [DATA_NEEDED: Burst Length] | 8 and 4 |
| Number of Pins | 96 | — |
| Memory Size | — | 4 Gbit |
| Clock Speed | — | 933 MHz |
| Access Time | — | 20 ns |
| Package / Case | — | 96-TWBGA (9x13mm) |
| Number of Banks | — | 8 |
| On-Die Termination | — | Yes |
| RoHS Status | — | Compliant |
| Memory Interface | — | Parallel |