K4B4G1646Q vs K4B4G1646D-BMK0 Comparison
Detailed side-by-side comparison of K4B4G1646Q by Samsung Electronics and K4B4G1646D-BMK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646Q | K4B4G1646D-BMK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Data Bus Width | 16 bits | — |
| Supply Voltage | 1.35V | — |
| Data Rate | 1866 Mbps (PC3-14900) | 1600 Mbps |
| Package | 96-ball FBGA | 96FBGA (TFBGA) |
| Die | Q-die | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | Yes |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| CAS Latency | Programmable | — |
| Operating Temperature | [DATA_NEEDED: Operating temperature range] | -40°C to 95°C |
| Speed Grade | — | 1600 Mbps (PC3L-12800) |
| Voltage | — | 1.35 V |
| Die Version | — | D-die |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Number of Functions | — | 1 |