K4RAH086VB-BCWM vs PDRQL8KCBF12-00 Comparison
Detailed side-by-side comparison of K4RAH086VB-BCWM by Samsung Electronics and PDRQL8KCBF12-00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VB-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.55 | $18.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 7200 MT/s |
| Supply Voltage | 1.1 V | 1.1 V |
| Interface | DDR5 (parallel) | Pseudo-differential DQ |
| Package | FBGA-82 | FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Operating Temperature | Commercial temperature range (per datasheet) | [DATA_NEEDED: Operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | 16 (BL16), burst chop 8 (BC8) |
| RoHS Status | Compliant | Compliant |
| Lifecycle Status | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| On-die ECC | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |