K4RAH086VE-BCWM vs K4RAH086VP-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VE-BCWM by Samsung Electronics and K4RAH086VP-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VE-BCWM | K4RAH086VP-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.60 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Organization | 2G x 8 | — |
| Data Rate | 5600 Mbps | 5600 Mbps/pin |
| Supply Voltage (VDD) | 1.1 V | — |
| Package | 82-ball FBGA | [DATA_NEEDED: exact FBGA package code and body size] |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Generation | DDR5 | — |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency | [DATA_NEEDED: CL at 5600 Mbps] | — |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | unknown |
| Lifecycle Status | Mass Production | Active |
| Manufacturer | Samsung Electronics | — |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Supply Voltage | — | 1.1 V |
| Interface | — | Parallel |
| Technology | — | DRAM DDR5 |
| Memory Format | — | DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Packaging | — | Tray |
| Application Segment | — | Industrial |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |